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FDC6333C - onsemi

Description: High performance trench technology for extremely low RDS(ON); Q2 –2.0 A, 30V.; Low gate charge ; Q1 2.5 A, 30V; RDS(on) = 150 mΩ @ VGS = 4.5 V; RDS(on) = 95 mΩ@ VGS = 10 V; RDS(on) = 220 mΩ @ VGS = -4.5 V; SuperSOT –6 package: small footprint (72% smaller thanSO-8); low profile (1mm thick).; RDS(on) = 150 mΩ@ VGS = -10 V

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FDC6333C - onsemi PCB footprint - SOT23 (6-Pin) - SOT23 (6-Pin) - TSOT23 6−Lead CASE 419BL ISSUE A
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FDC6333C - onsemi  - 3D model - SOT23 (6-Pin) - TSOT23 6−Lead CASE 419BL ISSUE A
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FDC6333C Details

  • Manufacturer Part Number:

    FDC6333C

  • Brand Name:

    onsemi

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Part Package Code:

    TSOT-23-6

  • Package Description:

    SUPERSOT-6

  • Manufacturer Package Code:

    419BL

  • Country Of Origin:

    Philippines

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    13 Weeks

  • Manufacturer:

    onsemi

  • YTEOL:

    6.95

  • Configuration:

    SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    30 V

  • Drain Current-Max (ID):

    2.5 A

  • Drain-source On Resistance-Max:

    0.095 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JESD-30 Code:

    R-PDSO-G6

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    2

  • Number of Terminals:

    6

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    N-CHANNEL AND P-CHANNEL

  • Power Dissipation-Max (Abs):

    0.96 W

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    YES

  • Terminal Finish:

    Matte Tin (Sn) - annealed

  • Terminal Form:

    GULL WING

  • Terminal Position:

    DUAL

  • Time@Peak Reflow Temperature-Max (s):

    30

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

FDC6333C Frequently Asked Questions (FAQs)

  • A good PCB layout for the FDC6333C involves keeping the high-current paths short and wide, using a solid ground plane, and placing the device close to the load. Additionally, it's recommended to use a shielded inductor and to keep the switching node (SW) away from sensitive analog circuits.
  • When selecting an inductor for the FDC6333C, consider the inductor's saturation current, DC resistance, and core material. A good starting point is to choose an inductor with a saturation current rating of at least 1.5 times the maximum output current, and a DC resistance of less than 100 mΩ. Ferrite or iron powder cores are suitable for most applications.
  • The FDC6333C is rated for operation up to 105°C ambient temperature, but the maximum junction temperature is 150°C. It's essential to ensure proper thermal design and heat sinking to prevent overheating.
  • Yes, the FDC6333C can be used in a synchronous rectification configuration. However, it's crucial to ensure that the synchronous rectifier is properly sized and that the dead time is set correctly to prevent shoot-through currents.
  • The output voltage of the FDC6333C can be adjusted by using a resistive divider network between the output and the FB pin. The ratio of the resistors determines the output voltage, and the recommended range is 0.8 V to 5.5 V.

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Part Image FDC6333C Fairchild Semiconductor Corporation

Small Signal Field-Effect Transistor, 2.5A I(D), 30V, 2-Element, N-Channel and P-Channel, Silicon, Metal-oxide Semiconductor FET