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FDC6301N - onsemi

Description: 25 V, 0.22 A continuous, 0.5 A Peak ; Very low level gate drive requirements allowing direct operation in 3V circuits. VGS(th) < 1.5V ; Gate-Source Zener for ESD ruggedness. >6kV Human Body Model ; RDS(ON) = 4 Ω @ VGS= 4.5 V; RDS(ON) = 5 Ω @ VGS= 2.7 V

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PCB Footprints
FDC6301N - onsemi PCB footprint - SOT23 (6-Pin) - SOT23 (6-Pin) - SuperSOT-6
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3D Models
FDC6301N - onsemi  - 3D model - SOT23 (6-Pin) - SuperSOT-6
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FDC6301N Details

  • Manufacturer Part Number:

    FDC6301N

  • Brand Name:

    onsemi

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Part Package Code:

    TSOT-23-6

  • Package Description:

    SUPERSOT-6

  • Manufacturer Package Code:

    419BL

  • Country Of Origin:

    Philippines

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    10 Weeks

  • Manufacturer:

    onsemi

  • YTEOL:

    6.5

  • Additional Feature:

    LOGIC LEVEL COMPATIBLE

  • Configuration:

    SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    25 V

  • Drain Current-Max (ID):

    0.22 A

  • Drain-source On Resistance-Max:

    4 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JESD-30 Code:

    R-PDSO-G6

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    2

  • Number of Terminals:

    6

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    NOT SPECIFIED

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    0.9 W

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    YES

  • Terminal Finish:

    Matte Tin (Sn) - annealed

  • Terminal Form:

    GULL WING

  • Terminal Position:

    DUAL

  • Time@Peak Reflow Temperature-Max (s):

    NOT SPECIFIED

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

FDC6301N Frequently Asked Questions (FAQs)

  • A good PCB layout for the FDC6301N involves keeping the input and output traces separate, using a solid ground plane, and placing the device close to the power source. Additionally, using a shielded inductor and placing it close to the device can help reduce EMI.
  • To ensure the FDC6301N operates within its SOA, monitor the device's junction temperature, input voltage, and output current. Make sure the device is not exposed to excessive voltage, current, or temperature, and that the thermal design is adequate to keep the junction temperature below the maximum rating.
  • A low-ESR ceramic capacitor with a value of 10uF to 22uF is recommended for the input of the FDC6301N. This helps to filter out noise and ripple on the input voltage.
  • To troubleshoot issues with the FDC6301N, start by checking the input voltage, output voltage, and output current. Verify that the device is properly soldered and that the PCB layout is correct. Check for signs of overheating, such as excessive temperature or thermal shutdown. Use an oscilloscope to check for noise or oscillations on the output.
  • Yes, the FDC6301N is suitable for high-reliability and automotive applications. It is AEC-Q100 qualified and meets the requirements for automotive applications. However, ensure that the device is used within its specified operating conditions and that the system design meets the required safety and reliability standards.

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FDC6301N Overview

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