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FDC638APZ - onsemi

Description: SuperSOT™ -6 package:small footprint (72% smaller than standard SO¨C8) low profile (1mm thick). ; Manufactured using Green packaging materials. ; Max rDS(ON) = 43mΩ at VGS = -4.5V, ID = -4.5A ; Halide free ; Low gate charge (8nC typical). ; Max rDS(ON) = 68mΩ at VGS = -2.5V, ID = -3.8A ; RoHS Compliant ; High performance trench technology for extremely low rDS(on)

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Symbol
FDC638APZ - onsemi - PCB symbol
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PCB Footprints
FDC638APZ - onsemi PCB footprint - SOT23 (6-Pin) - SOT23 (6-Pin) - TSOT23 6−Lead CASE 419BL ISSUE A
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3D Models
FDC638APZ - onsemi - 3D model - SOT23 (6-Pin) - TSOT23 6−Lead CASE 419BL ISSUE A
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FDC638APZ Details

  • Manufacturer Part Number:

    FDC638APZ

  • Brand Name:

    onsemi

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Part Package Code:

    TSOT-23-6

  • Package Description:

    SOT-23, 6 PIN

  • Manufacturer Package Code:

    419BL

  • Country Of Origin:

    Malaysia

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    12 Weeks

  • Manufacturer:

    onsemi

  • YTEOL:

    5.1

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    20 V

  • Drain Current-Max (ID):

    4.5 A

  • Drain-source On Resistance-Max:

    0.043 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • Feedback Cap-Max (Crss):

    195 pF

  • JESD-30 Code:

    R-PDSO-G6

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    6

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    P-CHANNEL

  • Power Dissipation-Max (Abs):

    1.6 W

  • Pulsed Drain Current-Max (IDM):

    20 A

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    YES

  • Terminal Finish:

    Matte Tin (Sn) - annealed

  • Terminal Form:

    GULL WING

  • Terminal Position:

    DUAL

  • Time@Peak Reflow Temperature-Max (s):

    30

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

  • Turn-off Time-Max (toff):

    149 ns

  • Turn-on Time-Max (ton):

    43 ns

FDC638APZ Frequently Asked Questions (FAQs)

  • A 2-layer or 4-layer PCB with a solid ground plane and thermal vias is recommended. The device should be placed near a thermal pad or a heat sink to dissipate heat efficiently.
  • The device requires a stable voltage supply and a proper biasing circuit. A voltage regulator and a decoupling capacitor are recommended to ensure a stable voltage supply. The biasing circuit should be designed to provide a stable voltage and current to the device.
  • The maximum operating temperature range for the FDC638APZ is -40°C to 125°C. However, the device's performance may degrade at higher temperatures, and it's recommended to operate it within a temperature range of -20°C to 85°C for optimal performance.
  • The FDC638APZ is sensitive to ESD. It's recommended to handle the device with an anti-static wrist strap or mat, and to use ESD-protected packaging and storage. The device should also be connected to a ground plane or a protective circuit to prevent ESD damage.
  • The recommended soldering profile for the FDC638APZ is a peak temperature of 260°C for 10-30 seconds, with a ramp-up rate of 3°C/s and a ramp-down rate of 6°C/s. It's recommended to follow the soldering profile recommended by the manufacturer to prevent damage to the device.

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FDC638APZ Overview

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FDC638APZ Alternates

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Part Image FDC638APZ Fairchild Semiconductor Corporation

Power Field-Effect Transistor, 4.5A I(D), 20V, 72ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET