HUFA76429D3 Model Download Search Results

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Image	Part Number	D.S	Description	Package Category	Prices / Stock	Model	Action
	HUFA76429D3 onsemi	1	UIS Rating Curve ; Simulation Models - Temperature Compensated PSPICE® and SABER™ Electrical Models - SPICE and SABER Thermal Impedance Models; Peak Current vs Pulse Width Curve; Switching Time vs RGS Curves; Ultra Low On-Resistance - rDS(ON) = 0.023 Ω, VGS = 10 V - rDS(ON) = 0.027 Ω, VGS = 5 V; Qualified to AEC Q101; RoHS Compliant	Transistor Outline, Vertical	HUFA76429D3	3D model available Symbol and footprint available 3	1 Download Model
	HUFA76429D3 Fairchild Semiconductor Corporation	1	Power Field-Effect Transistor, 20A I(D), 60V, 0.029ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251AA		HUFA76429D3	3D model not available Symbol and footprint not available 0	0 Build or Request
	HUFA76429D3 Intersil Corporation	1	Power Field-Effect Transistor, 20A I(D), 60V, 0.029ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251AA		HUFA76429D3	3D model not available Symbol and footprint not available 0	0 Build or Request
	HUFA76429D3ST-F085 onsemi	1	Last Shipments - Discrete MOSFETs	Other	HUFA76429D3ST-F085	3D model available Symbol and footprint available 3	1 Download Model

	HUFA76429D3ST_F085 onsemi	1	60V, 20A, 20.5mΩ, DPAK N-Channel UltraFET®, TO-252 3L (DPAK), 5000-TAPE REEL		HUFA76429D3ST_F085	3D model not available Symbol and footprint not available 0	0 Build or Request
	HUFA76429D3T Fairchild Semiconductor Corporation	1	Power Field-Effect Transistor, 20A I(D), 60V, 0.029ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251AA		HUFA76429D3T	3D model not available Symbol and footprint not available 0	0 Build or Request
	HUFA76429D3S Intersil Corporation	1	Power Field-Effect Transistor, 20A I(D), 60V, 0.029ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA		HUFA76429D3S	3D model not available Symbol and footprint not available 0	0 Build or Request
	HUFA76429D3ST Fairchild Semiconductor Corporation	1	Power Field-Effect Transistor, 20A I(D), 60V, 0.029ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA		HUFA76429D3ST	3D model not available Symbol and footprint not available 0	0 Build or Request
	HUFA76429D3S Fairchild Semiconductor Corporation	1	Power Field-Effect Transistor, 20A I(D), 60V, 0.029ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA		HUFA76429D3S	3D model not available Symbol and footprint not available 0	0 Build or Request
	HUFA76429D3_NL Fairchild Semiconductor Corporation	1	Power Field-Effect Transistor, 20A I(D), 60V, 0.029ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251AA		HUFA76429D3_NL	3D model not available Symbol and footprint not available 0	0 Build or Request
	HUFA76429D3ST Intersil Corporation	1	Power Field-Effect Transistor, 20A I(D), 60V, 0.029ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA		HUFA76429D3ST	3D model not available Symbol and footprint not available 0	0 Build or Request
	HUFA76429D3ST_F085 Fairchild Semiconductor Corporation	1	Power Field-Effect Transistor, 20A I(D), 60V, 0.029ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, ROHS COMPLIANT PACKAGE-3		HUFA76429D3ST_F085	3D model not available Symbol and footprint not available 0	0 Build or Request

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