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HUFA76429D3 - onsemi

Description: UIS Rating Curve ; Simulation Models  - Temperature Compensated PSPICE® and SABER™ Electrical Models   - SPICE and SABER Thermal Impedance Models; Peak Current vs Pulse Width Curve; Switching Time vs RGS Curves; Ultra Low On-Resistance  - rDS(ON) = 0.023 Ω, VGS = 10 V  - rDS(ON) = 0.027 Ω, VGS = 5 V; Qualified to AEC Q101; RoHS Compliant

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PCB Footprints
HUFA76429D3 - onsemi PCB footprint - Transistor Outline, Vertical - Transistor Outline, Vertical - I - PAK**
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3D Models
HUFA76429D3 - onsemi  - 3D model - Transistor Outline, Vertical - I - PAK**
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HUFA76429D3 Details

  • Manufacturer Part Number:

    HUFA76429D3

  • Brand Name:

    onsemi

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Obsolete

  • Part Package Code:

    IPAK-3 / DPAK-3 STRAIGHT LEAD

  • Manufacturer Package Code:

    369AR

  • Country Of Origin:

    Mainland China

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    4 Weeks

  • Manufacturer:

    onsemi

  • YTEOL:

    0

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    60 V

  • Drain Current-Max (ID):

    20 A

  • Drain-source On Resistance-Max:

    0.029 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JEDEC-95 Code:

    TO-251AA

  • JESD-30 Code:

    R-PSIP-T3

  • JESD-609 Code:

    e3

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    175 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    IN-LINE

  • Peak Reflow Temperature (Cel):

    NOT SPECIFIED

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    110 W

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    NO

  • Terminal Finish:

    Matte Tin (Sn) - annealed

  • Terminal Form:

    THROUGH-HOLE

  • Terminal Position:

    SINGLE

  • Time@Peak Reflow Temperature-Max (s):

    NOT SPECIFIED

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

HUFA76429D3 Frequently Asked Questions (FAQs)

  • A symmetrical layout with thermal vias and a large copper area for heat dissipation is recommended. Ensure the module is placed near a heat sink or a metal plate for efficient heat transfer.
  • Implement a proper cooling system, ensure good airflow, and consider derating the module's current rating according to the temperature derating curve in the datasheet.
  • Use a soldering iron with a temperature of 250°C to 270°C, and a soldering time of 3 to 5 seconds. Ensure the module is securely fastened to the PCB to prevent thermal stress.
  • Implement a robust EOS protection scheme, including TVS diodes, varistors, or surge protectors, to absorb voltage transients and spikes.
  • Store the module in a dry, cool place, away from direct sunlight and moisture. Handle the module by the body, avoiding touching the pins or electrical connections.

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Manufacturer Collaborated
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Sponsored

HUFA76429D3 Overview

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Part Image HUFA76429D3 Fairchild Semiconductor Corporation

Power Field-Effect Transistor, 20A I(D), 60V, 0.029ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251AA

Part Image HUFA76429D3_NL Fairchild Semiconductor Corporation

Power Field-Effect Transistor, 20A I(D), 60V, 0.029ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251AA