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FDC638APZ
onsemi
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1 | SuperSOT™ -6 package:small footprint (72% smaller than standard SO¨C8) low profile (1mm thick). ; Manufactured using Green packaging materials. ; Max rDS(ON) = 43mΩ at VGS = -4.5V, ID = -4.5A ; Halide free ; Low gate charge (8nC typical). ; Max rDS(ON) = 68mΩ at VGS = -2.5V, ID = -3.8A ; RoHS Compliant ; High performance trench technology for extremely low rDS(on) | SOT23 (6-Pin) | FDC638APZ |
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FDC638APZ
Rochester Electronics LLC
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1 | 4.5A, 20V, 72ohm, P-CHANNEL, Si, POWER, MOSFET, ROHS COMPLIANT, SUPERSOT, 6 PIN | FDC638APZ |
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FDC638APZ
Fairchild Semiconductor Corporation
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1 | Power Field-Effect Transistor, 4.5A I(D), 20V, 72ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET | FDC638APZ |
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