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FDC637BNZ - onsemi

Description: N-Channel PowerTrench® MOSFET, 2.5V Specified, 20V, 6.2A, 24mΩ

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FDC637BNZ - onsemi PCB footprint - SOT23 (6-Pin) - SOT23 (6-Pin) - TSOT23 6−Lead CASE 419BL ISSUE A
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FDC637BNZ - onsemi  - 3D model - SOT23 (6-Pin) - TSOT23 6−Lead CASE 419BL ISSUE A
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FDC637BNZ Details

  • Manufacturer Part Number:

    FDC637BNZ

  • Brand Name:

    onsemi

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Part Package Code:

    TSOT-23-6

  • Package Description:

    SUPERSOT-6

  • Manufacturer Package Code:

    419BL

  • Country Of Origin:

    Malaysia

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    13 Weeks

  • Manufacturer:

    onsemi

  • YTEOL:

    5

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    20 V

  • Drain Current-Max (ID):

    6.2 A

  • Drain-source On Resistance-Max:

    0.024 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • Feedback Cap-Max (Crss):

    117 pF

  • JESD-30 Code:

    R-PDSO-G6

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    6

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    1.6 W

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    YES

  • Terminal Finish:

    Matte Tin (Sn) - annealed

  • Terminal Form:

    GULL WING

  • Terminal Position:

    DUAL

  • Time@Peak Reflow Temperature-Max (s):

    30

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

FDC637BNZ Frequently Asked Questions (FAQs)

  • A good PCB layout for the FDC637BNZ involves keeping the input and output traces separate, using a solid ground plane, and placing the device close to the power source. Additionally, using a shielded cable and twisting the input and output wires can help reduce EMI.
  • To ensure proper biasing, connect the enable pin (EN) to a logic high (VCC) to enable the device. The input voltage (VIN) should be within the recommended range (2.5V to 5.5V), and the output voltage (VOUT) should be set to the desired level using an external resistor divider network.
  • The FDC637BNZ can handle a maximum continuous current of 1A, but it's recommended to derate the current to 0.8A for reliable operation. Exceeding the maximum current can lead to overheating and reduced lifespan.
  • To protect the FDC637BNZ from overvoltage and undervoltage conditions, use a voltage regulator or a voltage supervisor to monitor the input voltage. You can also add external overvoltage protection (OVP) and undervoltage protection (UVP) circuits to prevent damage to the device.
  • The thermal resistance of the FDC637BNZ is 125°C/W. To manage heat dissipation, use a heat sink or a thermal pad, and ensure good airflow around the device. You can also reduce the power dissipation by optimizing the PCB layout and using a lower power consumption design.

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FDC637BNZ Overview

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Part Image FDC637BNZ Rochester Electronics LLC

6200mA, 20V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, ROHS COMPLIANT, SUPERSOT-6, 6 PIN

Part Image FDC637BNZ Fairchild Semiconductor Corporation

Power Field-Effect Transistor, 6.2A I(D), 20V, 0.024ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET