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FDC638P - onsemi

Description: RDS(ON) = 48 mΩ @ VGS = –4.5 V RDS(ON) = 65 mΩ @ VGS = –2.5 V; –4.5 A, –20 V.; Low gate charge (10 nC typical); High performance trench technology for extremely low RDS(ON); SuperSOT ™ –6 package: small footprint (72% smaller than standard SO-8; low profile (1mm thick)

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PCB Footprints
FDC638P - onsemi PCB footprint - SOT23 (6-Pin) - SOT23 (6-Pin) - TSOT23-6
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3D Models
FDC638P - onsemi  - 3D model - SOT23 (6-Pin) - TSOT23-6
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FDC638P Details

  • Manufacturer Part Number:

    FDC638P

  • Brand Name:

    onsemi

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Part Package Code:

    TSOT-23-6

  • Package Description:

    SUPERSOT-6

  • Manufacturer Package Code:

    419BL

  • Country Of Origin:

    Philippines

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    13 Weeks

  • Manufacturer:

    onsemi

  • YTEOL:

    7.07

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    20 V

  • Drain Current-Max (ID):

    4.5 A

  • Drain-source On Resistance-Max:

    0.048 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JESD-30 Code:

    R-PDSO-G6

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    6

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    P-CHANNEL

  • Power Dissipation-Max (Abs):

    1.6 W

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    YES

  • Terminal Finish:

    Matte Tin (Sn) - annealed

  • Terminal Form:

    GULL WING

  • Terminal Position:

    DUAL

  • Time@Peak Reflow Temperature-Max (s):

    30

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

FDC638P Frequently Asked Questions (FAQs)

  • A good PCB layout for the FDC638P involves keeping the high-frequency traces short and away from the edges of the board, using a solid ground plane, and placing decoupling capacitors close to the device. Additionally, it's recommended to use a 4-layer board with a dedicated power plane and a dedicated ground plane.
  • To ensure proper biasing, make sure to connect the VCC pin to a stable 3.3V or 5V power supply, and the GND pin to a solid ground plane. Also, ensure that the input signals are within the recommended voltage range and that the output is properly terminated.
  • The FDC638P can operate up to 100 MHz, but the actual operating frequency may be limited by the specific application and PCB layout. It's recommended to consult the datasheet and application notes for more information.
  • The FDC638P has a maximum junction temperature of 150°C. To ensure proper thermal management, make sure to provide adequate heat sinking, such as a thermal pad or heat sink, and ensure good airflow around the device.
  • The recommended input termination scheme for the FDC638P is a series resistor and capacitor (RC) network, while the recommended output termination scheme is a series resistor and capacitor (RC) network or a parallel resistor and capacitor (RC) network, depending on the specific application.

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FDC638P Overview

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Part Image FDC638P_NF073 Fairchild Semiconductor Corporation

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Part Image FDC638PL99Z Fairchild Semiconductor Corporation

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Part Image FDC638PD87Z Fairchild Semiconductor Corporation

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Part Image FDC638P_NL Fairchild Semiconductor Corporation

Power Field-Effect Transistor, 4.5A I(D), 20V, 0.048ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET

For a full list of alternate parts for FDC638P, check out Findchips.com