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FDC6318P - onsemi

Description: High performance trench technology for extremely low RDS(ON); SuperSOT™-6 package: small footprint (72% smaller than standard SO-8); low profile (1mm thick); -2.5A, -12V  RDS(ON) = 90mΩ @ VGS = -4.5V  RDS(ON) = 125mΩ @ VGS = -2.5V  RDS(ON) = 200mΩ @ VGS = -1.8V

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PCB Footprints
FDC6318P - onsemi PCB footprint - SOT23 (6-Pin) - SOT23 (6-Pin) - TSOT23 6−Lead CASE 419BL ISSUE A
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3D Models
FDC6318P - onsemi  - 3D model - SOT23 (6-Pin) - TSOT23 6−Lead CASE 419BL ISSUE A
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FDC6318P Details

  • Manufacturer Part Number:

    FDC6318P

  • Brand Name:

    onsemi

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Part Package Code:

    TSOT-23-6

  • Manufacturer Package Code:

    419BL

  • Country Of Origin:

    Philippines

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    13 Weeks

  • Manufacturer:

    onsemi

  • YTEOL:

    6.95

  • Configuration:

    SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    12 V

  • Drain Current-Max (ID):

    2.5 A

  • Drain-source On Resistance-Max:

    0.09 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JESD-30 Code:

    R-PDSO-G6

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    2

  • Number of Terminals:

    6

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    P-CHANNEL

  • Power Dissipation-Max (Abs):

    0.7 W

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    YES

  • Terminal Finish:

    Matte Tin (Sn) - annealed

  • Terminal Form:

    GULL WING

  • Terminal Position:

    DUAL

  • Time@Peak Reflow Temperature-Max (s):

    30

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

FDC6318P Frequently Asked Questions (FAQs)

  • A good PCB layout for the FDC6318P involves keeping the input and output traces separate, using a solid ground plane, and placing the device close to the power source. Additionally, using a shielded inductor and placing it close to the device can help reduce EMI.
  • To ensure the FDC6318P operates within its SOA, monitor the device's junction temperature, input voltage, and output current. Make sure the device is not exposed to excessive voltage, current, or temperature, and that the thermal design is adequate to keep the junction temperature below the maximum rating.
  • A low-ESR ceramic capacitor with a value of 10uF to 22uF is recommended for the input of the FDC6318P. This helps to filter out noise and ripple on the input voltage.
  • To troubleshoot issues with the FDC6318P, start by checking the input voltage, output voltage, and output current. Verify that the device is properly soldered and that the PCB layout is correct. Check for signs of overheating, such as excessive temperature or thermal shutdown. Use an oscilloscope to check for noise or oscillations on the output.
  • Yes, the FDC6318P is suitable for high-reliability and automotive applications. It is AEC-Q100 qualified and meets the requirements for automotive applications. However, it's essential to follow the recommended design and layout guidelines to ensure the device operates reliably in these applications.

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FDC6318P Overview

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Part Image FDC6318P Fairchild Semiconductor Corporation

Small Signal Field-Effect Transistor, 2.5A I(D), 12V, 2-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET