FDC6310P - onsemi

Description: High performance trench technology for extremelylow RDS(ON) ; SuperSOT™ -6 package: small footprint 72%smaller than standard SO-8; low profile (1mm thick) ; -2.2 A, -20 V ; Low gate charge ; Fast switching speed ; RDS(on) = 125m Ω @ VGS = -4.5 V ; RDS(on) = 190m Ω @ VGS = -2.5 V