FDC6331L - onsemi

Description: RDS(ON) = 100 mΩ @ VGS = –1.8 V; RDS(ON) = 70 mΩ @ VGS = –2.5 V; –2.8 A, –8 V. ; High performance trench technology for extremelylow RDS(ON); Control MOSFET (Q1) includes Zener protection forESD ruggedness (>6KV Human body model); RDS(ON) = 55 mΩ @ VGS = –4.5 V