FDC6333C - onsemi

Description: High performance trench technology for extremely low RDS(ON); Q2 –2.0 A, 30V.; Low gate charge ; Q1 2.5 A, 30V; RDS(on) = 150 mΩ @ VGS = 4.5 V; RDS(on) = 95 mΩ@ VGS = 10 V; RDS(on) = 220 mΩ @ VGS = -4.5 V; SuperSOT –6 package: small footprint (72% smaller thanSO-8); low profile (1mm thick).; RDS(on) = 150 mΩ@ VGS = -10 V