FDC642P-F085P - onsemi

Description: Fast switching speed; Qualified to AEC Q101; Typ rDS(on) = 75.3mΩ at VGS = –2.5V, ID = –3.2A; Typ rDS(on) = 52.5mΩ at VGS = –4.5V, ID = –4A; Low gate charge(6.9nC typical) ; RoHS compliant; High performance trench technology for extremely low rDS(on); SuperSOT™–package:small footprint(72% smaller than standard SO–8);low profile(1mm thick).