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FDC642P-F085P - onsemi

Description: Fast switching speed; Qualified to AEC Q101; Typ rDS(on) = 75.3mΩ at VGS = –2.5V, ID = –3.2A; Typ rDS(on) = 52.5mΩ at VGS = –4.5V, ID = –4A; Low gate charge(6.9nC typical) ; RoHS compliant; High performance trench technology for extremely low rDS(on); SuperSOT™–package:small footprint(72% smaller than standard SO–8);low profile(1mm thick).

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PCB Footprints
FDC642P-F085P - onsemi PCB footprint - SOT23 (6-Pin) - SOT23 (6-Pin) - TSOT23 6−Lea
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FDC642P-F085P - onsemi  - 3D model - SOT23 (6-Pin) - TSOT23 6−Lea
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FDC642P-F085P Details

  • Manufacturer Part Number:

    FDC642P-F085P

  • Brand Name:

    onsemi

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    End Of Life

  • Part Package Code:

    SSOT 6L

  • Package Description:

    SSOT-6, 6 PIN

  • Manufacturer Package Code:

    419BL

  • Country Of Origin:

    Mainland China, Malaysia, Philippines, Thailand, Vietnam

  • ECCN Code:

    EAR99

  • HTS Code:

    8541.29.00.95

  • Manufacturer:

    onsemi

  • YTEOL:

    1

  • Avalanche Energy Rating (Eas):

    72 mJ

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    20 V

  • Drain Current-Max (ID):

    4 A

  • Drain-source On Resistance-Max:

    0.065 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JESD-30 Code:

    R-PDSO-G6

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    6

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    P-CHANNEL

  • Power Dissipation Ambient-Max:

    1.2 W

  • Power Dissipation-Max (Abs):

    1.2 W

  • Pulsed Drain Current-Max (IDM):

    20 A

  • Reference Standard:

    AEC-Q101

  • Surface Mount:

    YES

  • Terminal Form:

    GULL WING

  • Terminal Position:

    DUAL

  • Time@Peak Reflow Temperature-Max (s):

    30

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

  • Turn-off Time-Max (toff):

    53 ns

  • Turn-on Time-Max (ton):

    23 ns

FDC642P-F085P Frequently Asked Questions (FAQs)

  • A thermal pad is recommended under the package to improve thermal performance. A minimum of 2 oz copper thickness and a thermal relief pattern are recommended to ensure good heat dissipation.
  • Ensure that the device is operated within the recommended temperature range (–40°C to 150°C). Use a heat sink or thermal interface material to improve heat dissipation. Avoid exceeding the maximum junction temperature (Tj) of 150°C.
  • A drive strength of 2-4 mA is recommended for the gate driver to ensure reliable switching. Higher drive strengths may be required for high-frequency applications.
  • Use a latch-up prevention circuit or a gate driver with built-in latch-up protection. Ensure that the device is operated within the recommended voltage range and avoid exceeding the maximum voltage rating.
  • Use a human body model (HBM) ESD protection circuit with a minimum of 2 kV rating. Ensure that the ESD protection circuit is designed to protect the device from both positive and negative ESD events.

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FDC642P-F085P Overview

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