FDC645N - onsemi
Description: 5.5 A, 30 V. ; RDS(on) = 30 mΩ @ VGS = 4.5 V ; RDS(on) = 26 mΩ @ VGS = 10 V ; Low gate charge (13 nC typical) ; High performance trench technology for extremelylow RDS(ON) ; High power and current handling capability
Description: 5.5 A, 30 V. ; RDS(on) = 30 mΩ @ VGS = 4.5 V ; RDS(on) = 26 mΩ @ VGS = 10 V ; Low gate charge (13 nC typical) ; High performance trench technology for extremelylow RDS(ON) ; High power and current handling capability
