FDC658P - onsemi

Description: Low gate charge (8nC typical). ; SuperSOT™-6 package: small footprint (72% smaller than standard SO-8); low profile (1mm thick). ; High performance trench technology for extremely low RDS(ON). ; -4A, -30V.   RDS(ON) = 0.050 Ω @ VGS = -10 V,RDS(ON) = 0.075 Ω @ VGS = -4.5 V