Part Image

FDC658P - onsemi

Description: Low gate charge (8nC typical). ; SuperSOT™-6 package: small footprint (72% smaller than standard SO-8); low profile (1mm thick). ; High performance trench technology for extremely low RDS(ON). ; -4A, -30V.   RDS(ON) = 0.050 Ω @ VGS = -10 V,RDS(ON) = 0.075 Ω @ VGS = -4.5 V

Download FDC658P Model
Schematic
symbols
Schematic symbol is unavailable for download
PCB
footprints
PCB footprint is unavailable for download
3D
models
3D model is unavailable for download
PCB Footprints
FDC658P - onsemi PCB footprint - SOT23 (6-Pin) - SOT23 (6-Pin) - TSOT23 6−Lea
click to zoom
3D Models
FDC658P - onsemi  - 3D model - SOT23 (6-Pin) - TSOT23 6−Lea
click to zoom

FDC658P Details

  • Manufacturer Part Number:

    FDC658P

  • Brand Name:

    onsemi

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Part Package Code:

    TSOT-23-6

  • Package Description:

    SUPERSOT-6

  • Manufacturer Package Code:

    419BL

  • Country Of Origin:

    Philippines

  • ECCN Code:

    EAR99

  • Manufacturer:

    onsemi

  • YTEOL:

    7.07

  • Additional Feature:

    LOGIC LEVEL COMPATIBLE

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    30 V

  • Drain Current-Max (ID):

    4 A

  • Drain-source On Resistance-Max:

    0.05 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JESD-30 Code:

    R-PDSO-G6

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    6

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    P-CHANNEL

  • Power Dissipation-Max (Abs):

    1.6 W

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    YES

  • Terminal Finish:

    Matte Tin (Sn) - annealed

  • Terminal Form:

    GULL WING

  • Terminal Position:

    DUAL

  • Time@Peak Reflow Temperature-Max (s):

    30

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

FDC658P Frequently Asked Questions (FAQs)

  • The FDC658P can operate from -40°C to 150°C, making it suitable for high-reliability applications.
  • The FDC658P requires a bias voltage of 5V to 15V, and the recommended bias current is 1mA to 10mA. Ensure the bias voltage is stable and noise-free for optimal performance.
  • Use a multi-layer PCB with a solid ground plane to minimize noise and ensure good thermal conductivity. Place the FDC658P near a heat sink or thermal pad to dissipate heat efficiently.
  • Handle the FDC658P with ESD-protective equipment, such as wrist straps and mats. Ensure the PCB has ESD-protection components, like TVS diodes, and follow proper handling and storage procedures.
  • Use a low-impedance driver, such as a transistor or FET, to ensure fast switching times and minimize power consumption. The driver should be capable of sourcing and sinking current to ensure proper operation.

Trust Checks

This model has been built in collaboration with the manufacturer.
Manufacturer Collaborated
This model has been verified by system checks.
System Verified
This model has been reviewed by community users.
Community Approved
Sponsored

FDC658P Overview

Use the download button to access the FDC658P schematic symbol, PCB footprint, and 3D model.
To find more CAD model downloads similar to this part, try a partial part number search, like FDC65, or try a keyword search, such as Small Signal Field-Effect Transistors

Parts related to FDC658P

Showing 0 results

FDC658P Alternates

Showing results

Image Part Number Model
Part Image FDC658P Fairchild Semiconductor Corporation

Small Signal Field-Effect Transistor, 4A I(D), 30V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET

Part Image FDC658PD87Z Fairchild Semiconductor Corporation

Small Signal Field-Effect Transistor, 4A I(D), 30V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET

Part Image FDC658P_NL Fairchild Semiconductor Corporation

Small Signal Field-Effect Transistor, 4A I(D), 30V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET