FDC65 Footprint, Symbol and 3D Model search results

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Image	Part Number	D.S	Description	Package Category	Prices / Stock	Model	Action
	FDC6506P onsemi	1	Obsolete - Dual P-Channel PowerTrench MOSFET, Logic Level, -30V, -1.8A, 170mΩ	SOT23 (6-Pin)	FDC6506P	3D model available Symbol and footprint available 3	1 Download Model
	FDC658AP onsemi	1	RoHS Compliant ; Low Gate Charge ; High performance trench technology for extremely lowrDS(on) ; Max rDS(on) = 75 mΩ @ VGS = -4.5 V, ID = -3.4A ; Max rDS(on) = 50 mΩ @ VGS = -10 V, ID = -4A	SOT23 (6-Pin)	FDC658AP	3D model available Symbol and footprint available 3	1 Download Model
	FDC653N onsemi	1	Exceptional on-resistance and maximum DC current capability ; RDS(ON) = 0.055 Ω @ VGS = 4.5 V ; RDS(ON) = 0.035 Ω @ VGS = 10 V ; Proprietary SuperSOTTM-6 package design using copper lead frame for superior thermal and electrical capabilities ; 5 A, 30 V ; High density cell design for extremely low RDS(ON)	SOT23 (6-Pin)	FDC653N	3D model available Symbol and footprint available 3	1 Download Model
	FDC654P onsemi	1	−3.6 A, −30 V. RDS(ON) = 75 m @ VGS = −10 VRDS(ON) = 125 m @ VGS = −4.5 V Low Gate Charge (6.2 nC typical) High Performance Trench Technology for Extremely Low RDS(ON) These Device is Pb−Free and Halogen Free	SOT23 (6-Pin)	FDC654P	3D model available Symbol and footprint available 3	1 Download Model

	FDC655BN onsemi	1	Max rDS(ON) = 25 mΩ VGS = 10V, ID = 6.3A ; Max rDS(ON) = 33 mΩ VGS = 4.5V, ID = 5.5A ; Termination is Lead-free and RoHS Compliant ; Fast switching ; High performance trench technology for extremely low rDS(ON) ; Low gate charge	SOT23 (6-Pin)	FDC655BN	3D model available Symbol and footprint available 3	1 Download Model
	FDC6561AN onsemi	1	2.5 A, 30 V ; RDS(ON) = 0.145 Ω @ VGS = 4.5 V ; Very fast switching ; SuperSOT™-6 package: small footprint (72% smaller than standard SO-8); low profile (1mm thick) ; Low gate charge (2.1nC typical ; RDS(ON) = 0.095 Ω @ VGS = 10 V	SOT23 (6-Pin)	FDC6561AN	3D model available Symbol and footprint available 3	1 Download Model
	FDC658P onsemi	1	Low gate charge (8nC typical). ; SuperSOT™-6 package: small footprint (72% smaller than standard SO-8); low profile (1mm thick). ; High performance trench technology for extremely low RDS(ON). ; -4A, -30V. RDS(ON) = 0.050 Ω @ VGS = -10 V,RDS(ON) = 0.075 Ω @ VGS = -4.5 V	SOT23 (6-Pin)	FDC658P	3D model available Symbol and footprint available 3	1 Download Model
	FDC655AN_NL Fairchild Semiconductor Corporation	1	Power Field-Effect Transistor, 6.3A I(D), 30V, 0.027ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET		FDC655AN_NL	3D model not available Symbol and footprint not available 0	0 Build or Request
	FDC658AP Rochester Electronics LLC	1	4000mA, 30V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET, ROHS COMPLIANT, SUPERSOT-6		FDC658AP	3D model not available Symbol and footprint not available 0	0 Build or Request
	FDC658P-NB4E009A Fairchild Semiconductor Corporation	1	Small Signal Field-Effect Transistor, 4A I(D), 1-Element, P-Channel, Metal-oxide Semiconductor FET		FDC658P-NB4E009A	3D model not available Symbol and footprint not available 0	0 Build or Request
	FDC654P Rochester Electronics LLC	1	3600mA, 30V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET, LEAD FREE, SUPERSOT-6		FDC654P	3D model not available Symbol and footprint not available 0	0 Build or Request
	FDC653N Fairchild Semiconductor Corporation	1	Small Signal Field-Effect Transistor, 5A I(D), 30V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET		FDC653N	3D model not available Symbol and footprint not available 0	0 Build or Request
	FDC658AP-F095 Fairchild Semiconductor Corporation	1	Small Signal Field-Effect Transistor, 4A I(D), 1-Element, P-Channel, Metal-oxide Semiconductor FET		FDC658AP-F095	3D model not available Symbol and footprint not available 0	0 Build or Request
	FDC653ND87Z Fairchild Semiconductor Corporation	1	Small Signal Field-Effect Transistor, 5A I(D), 30V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET		FDC653ND87Z	3D model not available Symbol and footprint not available 0	0 Build or Request
	FDC653N_NL Fairchild Semiconductor Corporation	1	Small Signal Field-Effect Transistor, 5A I(D), 30V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET		FDC653N_NL	3D model not available Symbol and footprint not available 0	0 Build or Request

	FDC655BN_F073 Fairchild Semiconductor Corporation	1	Power Field-Effect Transistor, 6.3A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET		FDC655BN_F073	3D model not available Symbol and footprint not available 0	0 Build or Request
	FDC655BN-NBNN007 Fairchild Semiconductor Corporation	1	Power Field-Effect Transistor, 6.3A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET		FDC655BN-NBNN007	3D model not available Symbol and footprint not available 0	0 Build or Request
	FDC658P_F095 Fairchild Semiconductor Corporation	1	Small Signal Field-Effect Transistor, 4A I(D), 1-Element, P-Channel, Metal-oxide Semiconductor FET		FDC658P_F095	3D model not available Symbol and footprint not available 0	0 Build or Request
	FDC6561AN Fairchild Semiconductor Corporation	1	Small Signal Field-Effect Transistor, 2.5A I(D), 30V, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET		FDC6561AN	3D model not available Symbol and footprint not available 0	0 Build or Request
	FDC655BN Fairchild Semiconductor Corporation	1	Power Field-Effect Transistor, 6.3A I(D), 30V, 0.025ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET		FDC655BN	3D model not available Symbol and footprint not available 0	0 Build or Request
	FDC6561AN Rochester Electronics LLC	1	2500mA, 30V, 2 CHANNEL, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, SUPERSOT-6		FDC6561AN	3D model not available Symbol and footprint not available 0	0 Build or Request
	FDC658AP-G onsemi	1	Small Signal Field-Effect Transistor		FDC658AP-G	3D model not available Symbol and footprint not available 0	0 Build or Request
	FDC654P_NF073 Fairchild Semiconductor Corporation	1	Small Signal Field-Effect Transistor, 3.6A I(D), 1-Element, P-Channel, Metal-oxide Semiconductor FET		FDC654P_NF073	3D model not available Symbol and footprint not available 0	0 Build or Request
	FDC6506P-NB4S006A onsemi	1	Small Signal Field-Effect Transistor		FDC6506P-NB4S006A	3D model not available Symbol and footprint not available 0	0 Build or Request
	FDC658P-NB4E011 Fairchild Semiconductor Corporation	1	Small Signal Field-Effect Transistor, 4A I(D), 1-Element, P-Channel, Metal-oxide Semiconductor FET		FDC658P-NB4E011	3D model not available Symbol and footprint not available 0	0 Build or Request
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