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FDC653N - onsemi

Description: Exceptional on-resistance and maximum DC current capability ; RDS(ON) = 0.055 Ω @ VGS = 4.5 V ; RDS(ON) = 0.035 Ω @ VGS = 10 V ; Proprietary SuperSOTTM-6 package design using copper lead frame for superior thermal and electrical capabilities ; 5 A, 30 V ; High density cell design for extremely low RDS(ON)

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FDC653N - onsemi PCB footprint - SOT23 (6-Pin) - SOT23 (6-Pin) - TSOT23 6−Lead CASE 419BL ISSUE A
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FDC653N - onsemi  - 3D model - SOT23 (6-Pin) - TSOT23 6−Lead CASE 419BL ISSUE A
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FDC653N Details

  • Manufacturer Part Number:

    FDC653N

  • Brand Name:

    onsemi

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Part Package Code:

    TSOT-23-6

  • Package Description:

    SUPERSOT-6

  • Manufacturer Package Code:

    419BL

  • Country Of Origin:

    Philippines

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    10 Weeks

  • Manufacturer:

    onsemi

  • YTEOL:

    6.95

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    30 V

  • Drain Current-Max (ID):

    5 A

  • Drain-source On Resistance-Max:

    0.055 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JESD-30 Code:

    R-PDSO-G6

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    6

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    1.6 W

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    YES

  • Terminal Finish:

    Matte Tin (Sn) - annealed

  • Terminal Form:

    GULL WING

  • Terminal Position:

    DUAL

  • Time@Peak Reflow Temperature-Max (s):

    30

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

FDC653N Frequently Asked Questions (FAQs)

  • The recommended operating voltage range for the FDC653N is 1.65V to 3.6V.
  • To ensure proper biasing, connect the VCC pin to a stable voltage source, and decouple it with a 0.1uF capacitor to ground. Also, ensure the input signals are within the recommended voltage range.
  • The maximum current draw of the FDC653N is typically around 1.5mA, but this can vary depending on the specific application and operating conditions.
  • To prevent ESD damage, handle the FDC653N by the body, avoid touching the pins, and use an ESD wrist strap or mat when handling the device. Also, ensure the PCB is designed with ESD protection in mind.
  • For optimal performance, keep the input and output traces short and away from noise sources. Use a ground plane to reduce noise and ensure the PCB is designed with signal integrity in mind.

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FDC653N Overview

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Part Image FDC653N_NF073 Fairchild Semiconductor Corporation

Small Signal Field-Effect Transistor, 5A I(D), 30V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET

Part Image FDC653N_NL Fairchild Semiconductor Corporation

Small Signal Field-Effect Transistor, 5A I(D), 30V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET