FDC654P - onsemi
Description: −3.6 A, −30 V. RDS(ON) = 75 m @ VGS = −10 V RDS(ON) = 125 m @ VGS = −4.5 V Low Gate Charge (6.2 nC typical) High Performance Trench Technology for Extremely Low RDS(ON) These Device is Pb−Free and Halogen Free
Description: −3.6 A, −30 V. RDS(ON) = 75 m @ VGS = −10 V RDS(ON) = 125 m @ VGS = −4.5 V Low Gate Charge (6.2 nC typical) High Performance Trench Technology for Extremely Low RDS(ON) These Device is Pb−Free and Halogen Free
FDC654P
onsemi
Yes
Yes
Active
TSOT-23-6
SUPERSOT-6
419BL
Philippines
EAR99
14 Weeks
onsemi