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FDC658AP - onsemi

Description: RoHS Compliant ; Low Gate Charge ; High performance trench technology for extremely lowrDS(on) ; Max rDS(on) = 75 mΩ @ VGS = -4.5 V, ID = -3.4A ; Max rDS(on) = 50 mΩ @ VGS = -10 V, ID = -4A

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PCB Footprints
FDC658AP - onsemi PCB footprint - SOT23 (6-Pin) - SOT23 (6-Pin) - TSOT23 6−Lead CASE 419BL ISSUE A
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3D Models
FDC658AP - onsemi  - 3D model - SOT23 (6-Pin) - TSOT23 6−Lead CASE 419BL ISSUE A
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FDC658AP Details

  • Manufacturer Part Number:

    FDC658AP

  • Brand Name:

    onsemi

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Part Package Code:

    TSOT-23-6

  • Package Description:

    SUPERSOT-6

  • Manufacturer Package Code:

    419BL

  • Country Of Origin:

    Philippines

  • ECCN Code:

    EAR99

  • HTS Code:

    8541.29.00.95

  • Factory Lead Time:

    13 Weeks

  • Manufacturer:

    onsemi

  • YTEOL:

    7.07

  • Additional Feature:

    LOGIC LEVEL COMPATIBLE

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    30 V

  • Drain Current-Max (ID):

    4 A

  • Drain-source On Resistance-Max:

    0.05 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • Feedback Cap-Max (Crss):

    90 pF

  • JESD-30 Code:

    R-PDSO-G6

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    6

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    P-CHANNEL

  • Power Dissipation Ambient-Max:

    1.6 W

  • Power Dissipation-Max (Abs):

    1.6 W

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    YES

  • Terminal Finish:

    Matte Tin (Sn) - annealed

  • Terminal Form:

    GULL WING

  • Terminal Position:

    DUAL

  • Time@Peak Reflow Temperature-Max (s):

    30

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

FDC658AP Frequently Asked Questions (FAQs)

  • The recommended operating voltage range for the FDC658AP is 2.7V to 5.5V.
  • To ensure proper biasing, connect the VCC pin to a stable voltage source, and decouple it with a 0.1uF capacitor to ground. Also, ensure the input signals are within the recommended voltage range.
  • The maximum current draw of the FDC658AP is typically 1.5mA, but this can vary depending on the operating frequency and output load.
  • To prevent ESD damage, handle the FDC658AP by the body or use an anti-static wrist strap, and store it in an anti-static bag or container.
  • The thermal resistance of the FDC658AP package is typically 150°C/W for the SOIC package and 200°C/W for the TSSOP package.

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FDC658AP Overview

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Part Image FDC658AP Fairchild Semiconductor Corporation

Small Signal Field-Effect Transistor, 4A I(D), 30V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET