FDD18N20LZ - onsemi
Description: RDS(on) = 125mΩ ( Max.)@ VGS = 10V, ID = 8A; RoHS compliant; 100% avalanche tested; Low Crss ( Typ. 25pF); ESD improved capability; Improved dv/dt capability; Low gate charge ( Typ. 30nC)
Description: RDS(on) = 125mΩ ( Max.)@ VGS = 10V, ID = 8A; RoHS compliant; 100% avalanche tested; Low Crss ( Typ. 25pF); ESD improved capability; Improved dv/dt capability; Low gate charge ( Typ. 30nC)
