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FDD18N20LZ - onsemi

Description: RDS(on) = 125mΩ ( Max.)@ VGS = 10V, ID = 8A; RoHS compliant; 100% avalanche tested; Low Crss ( Typ. 25pF); ESD improved capability; Improved dv/dt capability; Low gate charge ( Typ. 30nC)

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PCB Footprints
FDD18N20LZ - onsemi PCB footprint - Other - Other - FDD18N20LZ-2
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FDD18N20LZ - onsemi  - 3D model - Other - FDD18N20LZ-2
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FDD18N20LZ Details

  • Manufacturer Part Number:

    FDD18N20LZ

  • Brand Name:

    onsemi

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Part Package Code:

    DPAK-3 / TO-252-3

  • Manufacturer Package Code:

    369AS

  • Country Of Origin:

    Mainland China

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    6 Weeks

  • Manufacturer:

    onsemi

  • YTEOL:

    5.97

  • Avalanche Energy Rating (Eas):

    320 mJ

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    200 V

  • Drain Current-Max (ID):

    16 A

  • Drain-source On Resistance-Max:

    0.13 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JEDEC-95 Code:

    TO-252AA

  • JESD-30 Code:

    R-PSSO-G2

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    2

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    89 W

  • Pulsed Drain Current-Max (IDM):

    64 A

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    YES

  • Terminal Finish:

    Matte Tin (Sn) - annealed

  • Terminal Form:

    GULL WING

  • Terminal Position:

    SINGLE

  • Time@Peak Reflow Temperature-Max (s):

    30

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

FDD18N20LZ Frequently Asked Questions (FAQs)

  • The maximum operating temperature range for the FDD18N20LZ is -55°C to 150°C.
  • To ensure proper biasing, connect the gate to a voltage source through a resistor, and the source to ground through another resistor. The recommended biasing voltage is typically around 10-15V.
  • The maximum current rating for the FDD18N20LZ is 18A.
  • To protect the FDD18N20LZ from ESD, handle the device with an anti-static wrist strap or mat, and ensure that the device is stored in an anti-static bag or container.
  • The recommended PCB layout for the FDD18N20LZ involves placing the device near the power source, using a solid ground plane, and minimizing trace lengths and widths to reduce parasitic inductance.

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FDD18N20LZ Overview

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