FDD2670 - onsemi
Description: High performance trench technology for extremelylow RDS(ON) ; RDS(ON) = 130 mΩ @ VGS = 10V ; High power and current handling capability ; Low gate charge ; 3.6 A, 200 V ; Fast switching speed
Description: High performance trench technology for extremelylow RDS(ON) ; RDS(ON) = 130 mΩ @ VGS = 10V ; High power and current handling capability ; Low gate charge ; 3.6 A, 200 V ; Fast switching speed
