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FDD2670 - onsemi

Description: High performance trench technology for extremelylow RDS(ON) ; RDS(ON) = 130 mΩ @ VGS = 10V ; High power and current handling capability ; Low gate charge ; 3.6 A, 200 V ; Fast switching speed

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Symbol
FDD2670 - onsemi - PCB symbol
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PCB Footprints
FDD2670 - onsemi PCB footprint - Other - Other - DPAK3 6.10x6.54x2.29, 4.57P CASE 369AS ISSUE B_2025-1.1
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3D Models
FDD2670 - onsemi - 3D model - Other - DPAK3 6.10x6.54x2.29, 4.57P CASE 369AS ISSUE B_2025-1.1
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FDD2670 Details

  • Manufacturer Part Number:

    FDD2670

  • Brand Name:

    onsemi

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Part Package Code:

    DPAK-3 / TO-252-3

  • Package Description:

    DPAK-3

  • Manufacturer Package Code:

    369AS

  • Country Of Origin:

    Mainland China

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    15 Weeks

  • Manufacturer:

    onsemi

  • YTEOL:

    5.97

  • Avalanche Energy Rating (Eas):

    375 mJ

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    200 V

  • Drain Current-Max (ID):

    3.6 A

  • Drain-source On Resistance-Max:

    0.13 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JEDEC-95 Code:

    TO-252

  • JESD-30 Code:

    R-PSSO-G2

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    2

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    70 W

  • Pulsed Drain Current-Max (IDM):

    20 A

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    YES

  • Terminal Finish:

    Matte Tin (Sn) - annealed

  • Terminal Form:

    GULL WING

  • Terminal Position:

    SINGLE

  • Time@Peak Reflow Temperature-Max (s):

    30

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

FDD2670 Frequently Asked Questions (FAQs)

  • A good PCB layout for the FDD2670 involves keeping the input and output traces separate, using a solid ground plane, and placing the device close to the power source. Additionally, using a shielded inductor and placing it close to the device can help reduce EMI.
  • To ensure the FDD2670 operates within its SOA, monitor the device's junction temperature, input voltage, and output current. Make sure the device is properly heatsinked, and the input voltage is within the recommended range. Also, ensure the output current is within the specified maximum rating.
  • The recommended input capacitor value for the FDD2670 is typically in the range of 1-10uF, depending on the input voltage and output current requirements. A larger capacitor value can help reduce input voltage ripple, but may increase the device's start-up time.
  • If the FDD2670 is not turning on, check the input voltage, ensure it's within the recommended range. Verify the enable pin is properly biased, and the input capacitor is properly connected. Also, check for any short circuits or overload conditions on the output.
  • The FDD2670 is rated for operation up to 150°C, but its performance may degrade at higher temperatures. Ensure proper heatsinking and thermal management to maintain a safe junction temperature. Consult the datasheet for thermal derating information.

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FDD2670 Overview

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