FDD306P - onsemi

Description: RDS(ON) = 41 mΩ @ VGS = -2.5V ; High performance trench technology for extremelylow RDS(ON) ; High power and current handling capability ; RDS(ON) = 28 mΩ @ VGS = -4.5V ; -6.7A, -12V ; Fast switching speed ; RDS(ON) = 90 mΩ @ VGS = -1.8V