FDD3670 - onsemi

Description: 34 A, 100 V ; High performance trench technology for extremelylow RDS(ON). ; RDS(ON) = 35 mΩ @ VGS = 6 V ; Fast switching speed. ; High power and current handling capability. ; Low gate charge (57 nC typical) ; RDS(ON) = 32 mΩ @ VGS = 10 V