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FDD3670 - onsemi

Description: 34 A, 100 V ; High performance trench technology for extremelylow RDS(ON). ; RDS(ON) = 35 mΩ @ VGS = 6 V ; Fast switching speed. ; High power and current handling capability. ; Low gate charge (57 nC typical) ; RDS(ON) = 32 mΩ @ VGS = 10 V

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PCB Footprints
FDD3670 - onsemi PCB footprint - Other - Other - FDD3670-1
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FDD3670 Details

  • Manufacturer Part Number:

    FDD3670

  • Brand Name:

    onsemi

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Part Package Code:

    DPAK-3 / TO-252-3

  • Package Description:

    DPAK-3/2

  • Manufacturer Package Code:

    369AS

  • Country Of Origin:

    Mainland China

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    12 Weeks

  • Manufacturer:

    onsemi

  • YTEOL:

    5.85

  • Avalanche Energy Rating (Eas):

    360 mJ

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    100 V

  • Drain Current-Max (ID):

    34 A

  • Drain-source On Resistance-Max:

    0.032 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JEDEC-95 Code:

    TO-252

  • JESD-30 Code:

    R-PSSO-G2

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    2

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    175 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    1.6 W

  • Pulsed Drain Current-Max (IDM):

    100 A

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    YES

  • Terminal Finish:

    Matte Tin (Sn) - annealed

  • Terminal Form:

    GULL WING

  • Terminal Position:

    SINGLE

  • Time@Peak Reflow Temperature-Max (s):

    30

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

FDD3670 Frequently Asked Questions (FAQs)

  • The FDD3670 can operate from -40°C to 150°C, making it suitable for high-reliability applications.
  • The FDD3670 requires a bias voltage of 12V to 15V on the gate pin, and a source pin voltage of 0V to 5V. Ensure the bias voltage is stable and within the recommended range for optimal performance.
  • To minimize thermal resistance, use a thermal pad on the bottom of the package, and ensure good thermal conductivity between the package and the PCB. A thermal via or thermal pad under the package can also help to dissipate heat.
  • Yes, the FDD3670 is suitable for high-frequency switching applications up to 1 MHz. However, ensure that the gate drive circuitry is designed to handle the high-frequency switching requirements.
  • Handle the FDD3670 with ESD-protective equipment, and ensure the PCB design includes ESD protection circuitry, such as TVS diodes or ESD protection arrays, to prevent damage from static electricity.

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FDD3670 Overview

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