FDD36 Footprint, Symbol and 3D Model search results

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Image	Part Number	D.S	Description	Package Category	Prices / Stock	Model	Action
	FDD3672 onsemi	1	Qg(tot) = 24nC (Typ.), VGS = 10V ; Optimized efficiency at high frequencies ; Low Miller Charge ; UIS Capability (Single Pulse and Repetitive Pulse) ; rDS(ON) = 24mΩ(Typ.), VGS = 10V, ID = 44A ; Low Qrr Body Diode	Other	FDD3672	3D model available Symbol and footprint available 3	1 Download Model
	FDD3690 onsemi	1	Low gate charge (28 nC typical). ; 22 A, 100 V. ; RDS(ON) = 71 mΩ @ VGS = 6 V ; High performance trench technology for extremelylow RDS(ON). ; Fast switching. ; RDS(ON) = 64 mΩ @ VGS = 10 V ; High power and current handling capability.	Other	FDD3690	3D model not available Symbol and footprint available 2	1 Download Model
	FDD3680 onsemi	1	Obsolete - PowerTrench MOSFET, N-Channel, 100V, 32A, 36mΩ	Other	FDD3680	3D model not available Symbol and footprint available 2	1 Download Model
	FDD3670 onsemi	1	34 A, 100 V ; High performance trench technology for extremelylow RDS(ON). ; RDS(ON) = 35 mΩ @ VGS = 6 V ; Fast switching speed. ; High power and current handling capability. ; Low gate charge (57 nC typical) ; RDS(ON) = 32 mΩ @ VGS = 10 V	Other	FDD3670	3D model not available Symbol and footprint available 2	1 Download Model

	FDD3672-F085 onsemi	1	Last Shipments - 100V N-Channel PowerTrench MOSFET 25A, 46mΩ	Other	FDD3672-F085	3D model not available Symbol and footprint available 2	1 Download Model
	FDD3682 onsemi	1	Qualified to AEC Q101Formerly developmental type 82755 ; Low Miller Charge ; Qg(tot) = 18.5nC (Typ.), VGS = 10V ; RoHS Compliant ; UIS Capability (Single Pulse and Repetitive Pulse) ; Low Qrr Body Diode ; rDS(ON) = 32mΩ(Typ.), VGS = 10V, ID = 32A	Other	FDD3682	3D model not available Symbol and footprint available 2	1 Download Model
	FDD3682_F085 Fairchild Semiconductor Corporation	1	Power Field-Effect Transistor, 5.5A I(D), 100V, 0.036ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA		FDD3682_F085	3D model not available Symbol and footprint not available 0	0 Build or Request
	FDD3672_F085 Fairchild Semiconductor Corporation	1	Power Field-Effect Transistor, 44A I(D), 100V, 0.028ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA		FDD3672_F085	3D model not available Symbol and footprint not available 0	0 Build or Request
	FDD3672_NL Fairchild Semiconductor Corporation	1	Power Field-Effect Transistor, 6.5A I(D), 100V, 0.028ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA		FDD3672_NL	3D model not available Symbol and footprint not available 0	0 Build or Request
	FDD3682_NB82112 Fairchild Semiconductor Corporation	1	Power Field-Effect Transistor, 32A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET		FDD3682_NB82112	3D model not available Symbol and footprint not available 0	0 Build or Request
	FDD3670-NL Fairchild Semiconductor Corporation	1	Power Field-Effect Transistor, 34A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET		FDD3670-NL	3D model not available Symbol and footprint not available 0	0 Build or Request
	FDD3680 Rochester Electronics LLC	1	25A, 100V, 0.046ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252, DPAK-3		FDD3680	3D model not available Symbol and footprint not available 0	0 Build or Request
	FDD3670 Rochester Electronics LLC	1	34A, 100V, 0.032ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252, DPAK-3		FDD3670	3D model not available Symbol and footprint not available 0	0 Build or Request
	FDD3672-G Fairchild Semiconductor Corporation	1	Power Field-Effect Transistor, 44A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET		FDD3672-G	3D model not available Symbol and footprint not available 0	0 Build or Request
	FDD3680 Fairchild Semiconductor Corporation	1	Power Field-Effect Transistor, 25A I(D), 100V, 0.046ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252		FDD3680	3D model not available Symbol and footprint not available 0	0 Build or Request

	FDD3672 Rochester Electronics LLC	1	6.5A, 100V, 0.028ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA, TO-252AA, 3 PIN		FDD3672	3D model not available Symbol and footprint not available 0	0 Build or Request
	FDD3682-F085 onsemi	1	PowerTrench® MOSFET, N-Channel, 100V, 32A, 36mΩ, TO-252 3L (DPAK), 2500-REEL, Automotive Qualified		FDD3682-F085	3D model not available Symbol and footprint not available 0	0 Build or Request
	FDD3690_NL Fairchild Semiconductor Corporation	1	Power Field-Effect Transistor, 22A I(D), 100V, 0.064ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252		FDD3690_NL	3D model not available Symbol and footprint not available 0	0 Build or Request
	FDD3682_F085 onsemi	1	100V, 32A, 32mΩ, DPAK N-Channel PowerTrench®, TO-252 3L (DPAK), 5000-TAPE REEL		FDD3682_F085	3D model not available Symbol and footprint not available 0	0 Build or Request
	FDD3672_NL Rochester Electronics LLC	1	6.5A, 100V, 0.028ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA, TO-252AA, 3 PIN		FDD3672_NL	3D model not available Symbol and footprint not available 0	0 Build or Request
	FDD3672_F085 onsemi	1	100V, 44A, 24mΩ, DPAK N-Channel UltraFET® Trench, TO-252 3L (DPAK), 5000-TAPE REEL		FDD3672_F085	3D model not available Symbol and footprint not available 0	0 Build or Request
	FDD3682_NL Fairchild Semiconductor Corporation	1	Power Field-Effect Transistor, 5.5A I(D), 100V, 0.036ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA		FDD3682_NL	3D model not available Symbol and footprint not available 0	0 Build or Request
	FDD3690 Fairchild Semiconductor Corporation	1	Power Field-Effect Transistor, 22A I(D), 100V, 0.064ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252		FDD3690	3D model not available Symbol and footprint not available 0	0 Build or Request
	FDD3672 Fairchild Semiconductor Corporation	1	Power Field-Effect Transistor, 6.5A I(D), 100V, 0.028ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA		FDD3672	3D model not available Symbol and footprint not available 0	0 Build or Request
	FDD3670 Fairchild Semiconductor Corporation	1	Power Field-Effect Transistor, 34A I(D), 100V, 0.032ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252		FDD3670	3D model not available Symbol and footprint not available 0	0 Build or Request
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