FDD36 Model Download Search Results
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Results for similar keyword: FDD3670
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FDD3670
onsemi
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1 | 34 A, 100 V ; High performance trench technology for extremelylow RDS(ON). ; RDS(ON) = 35 mΩ @ VGS = 6 V ; Fast switching speed. ; High power and current handling capability. ; Low gate charge (57 nC typical) ; RDS(ON) = 32 mΩ @ VGS = 10 V | Other | FDD3670 |
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FDD3670
Rochester Electronics LLC
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1 | 34A, 100V, 0.032ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252, DPAK-3 | FDD3670 |
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FDD3670
Fairchild Semiconductor Corporation
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1 | Power Field-Effect Transistor, 34A I(D), 100V, 0.032ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252 | FDD3670 |
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FDD3670-NL
Fairchild Semiconductor Corporation
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1 | Power Field-Effect Transistor, 34A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET | FDD3670-NL |
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![Part Image]([null,null,"//content.supplyframe.com/images/process/fit-in/100x100/p/to252_3.jpg"])
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