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FDD3672 - onsemi

Description: Qg(tot) = 24nC (Typ.), VGS = 10V ; Optimized efficiency at high frequencies ; Low Miller Charge ; UIS Capability (Single Pulse and Repetitive Pulse) ; rDS(ON) = 24mΩ(Typ.), VGS = 10V, ID = 44A ; Low Qrr Body Diode

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PCB Footprints
FDD3672 - onsemi PCB footprint - Other - Other - TO-252AA_2024
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FDD3672 - onsemi  - 3D model - Other - TO-252AA_2024
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FDD3672 Details

  • Manufacturer Part Number:

    FDD3672

  • Brand Name:

    onsemi

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Part Package Code:

    DPAK-3 / TO-252-3

  • Package Description:

    TO-252AA, 3 PIN

  • Manufacturer Package Code:

    369AS

  • Country Of Origin:

    Mainland China

  • ECCN Code:

    EAR99

  • Manufacturer:

    onsemi

  • YTEOL:

    5.85

  • Avalanche Energy Rating (Eas):

    120 mJ

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    100 V

  • Drain Current-Max (ID):

    6.5 A

  • Drain-source On Resistance-Max:

    0.028 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JEDEC-95 Code:

    TO-252AA

  • JESD-30 Code:

    R-PSSO-G2

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    2

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    175 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    135 W

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    YES

  • Terminal Finish:

    Matte Tin (Sn) - annealed

  • Terminal Form:

    GULL WING

  • Terminal Position:

    SINGLE

  • Time@Peak Reflow Temperature-Max (s):

    30

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

FDD3672 Frequently Asked Questions (FAQs)

  • A 2-layer or 4-layer PCB with a solid ground plane and thermal vias is recommended. Ensure a minimum of 1 oz copper thickness and a thermal relief pattern under the device.
  • Ensure the input voltage (VIN) is within the recommended range (4.5V to 18V). Use a stable voltage regulator and decouple the input with a 10uF capacitor. Bias the gate with a 1kΩ resistor and a 10nF capacitor.
  • The maximum SOA is defined by the onsemi application note AND8199/D. It is essential to ensure the device operates within the recommended SOA to prevent damage or degradation.
  • Use an ESD wrist strap or mat when handling the device. Ensure the PCB has ESD protection diodes (e.g., 1.5KE6.8A) and a 10nF capacitor between the gate and source pins.
  • A gate drive voltage of 10V to 12V is recommended for optimal switching performance. Ensure the gate drive voltage is within the recommended range to prevent device damage.

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FDD3672 Overview

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Part Image FDD3672 Fairchild Semiconductor Corporation

Power Field-Effect Transistor, 6.5A I(D), 100V, 0.028ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA

Part Image FDD3672-G Fairchild Semiconductor Corporation

Power Field-Effect Transistor, 44A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET

Part Image FDD3672_NL Fairchild Semiconductor Corporation

Power Field-Effect Transistor, 6.5A I(D), 100V, 0.028ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA