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FDD3690 - onsemi

Description: Low gate charge (28 nC typical). ; 22 A, 100 V. ; RDS(ON) = 71 mΩ @ VGS = 6 V ; High performance trench technology for extremelylow RDS(ON). ; Fast switching. ; RDS(ON) = 64 mΩ @ VGS = 10 V ; High power and current handling capability.

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FDD3690 - onsemi PCB footprint - Other - Other - FDD3690-2
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FDD3690 Details

  • Manufacturer Part Number:

    FDD3690

  • Brand Name:

    onsemi

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Part Package Code:

    DPAK-3 / TO-252-3

  • Package Description:

    DPAK-3/2

  • Manufacturer Package Code:

    369AS

  • Country Of Origin:

    Mainland China

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    13 Weeks

  • Manufacturer:

    onsemi

  • YTEOL:

    5.75

  • Avalanche Energy Rating (Eas):

    175 mJ

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    100 V

  • Drain Current-Max (ID):

    22 A

  • Drain-source On Resistance-Max:

    0.064 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JEDEC-95 Code:

    TO-252

  • JESD-30 Code:

    R-PSSO-G2

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    2

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    175 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    60 W

  • Pulsed Drain Current-Max (IDM):

    75 A

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    YES

  • Terminal Finish:

    Matte Tin (Sn) - annealed

  • Terminal Form:

    GULL WING

  • Terminal Position:

    SINGLE

  • Time@Peak Reflow Temperature-Max (s):

    30

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

FDD3690 Frequently Asked Questions (FAQs)

  • A 2-layer or 4-layer PCB with a solid ground plane and thermal vias is recommended. The device should be placed near a thermal pad or heat sink to dissipate heat efficiently.
  • The FDD3690 requires a bias voltage of 5V to 15V. Ensure the bias voltage is stable and within the recommended range. A decoupling capacitor of 10uF to 100uF should be placed close to the device to filter out noise.
  • The maximum allowable power dissipation for the FDD3690 is 2.5W. Ensure the device is operated within the recommended power dissipation to prevent overheating and damage.
  • Handle the device by the body or use an anti-static wrist strap to prevent ESD damage. Ensure the PCB is designed with ESD protection in mind, such as using ESD diodes or resistors.
  • The FDD3690 is designed to operate from 100 kHz to 500 MHz. However, the optimal operating frequency range depends on the specific application and should be determined through characterization and testing.

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FDD3690 Overview

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Part Image FDD3690 Fairchild Semiconductor Corporation

Power Field-Effect Transistor, 22A I(D), 100V, 0.064ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252

Part Image FDD3690_NL Fairchild Semiconductor Corporation

Power Field-Effect Transistor, 22A I(D), 100V, 0.064ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252