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FDD3682 - onsemi

Description: Qualified to AEC Q101Formerly developmental type 82755 ; Low Miller Charge ; Qg(tot) = 18.5nC (Typ.), VGS = 10V ; RoHS Compliant ; UIS Capability (Single Pulse and Repetitive Pulse) ; Low Qrr Body Diode ; rDS(ON) = 32mΩ(Typ.), VGS = 10V, ID = 32A

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FDD3682 - onsemi PCB footprint - Other - Other - DPAK3 (TO−252 3 LD) CASE 369AS ISSUE O_10
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FDD3682 Details

  • Manufacturer Part Number:

    FDD3682

  • Brand Name:

    onsemi

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Not Recommended

  • Part Package Code:

    DPAK-3 / TO-252-3

  • Package Description:

    TO-252AA, 3 PIN

  • Manufacturer Package Code:

    369AS

  • Country Of Origin:

    Mainland China

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    11 Weeks

  • Manufacturer:

    onsemi

  • YTEOL:

    3

  • Avalanche Energy Rating (Eas):

    55 mJ

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    100 V

  • Drain Current-Max (ID):

    5.5 A

  • Drain-source On Resistance-Max:

    0.036 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JEDEC-95 Code:

    TO-252AA

  • JESD-30 Code:

    R-PSSO-G2

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    2

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    175 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    N-CHANNEL

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    YES

  • Terminal Finish:

    Matte Tin (Sn) - annealed

  • Terminal Form:

    GULL WING

  • Terminal Position:

    SINGLE

  • Time@Peak Reflow Temperature-Max (s):

    30

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

FDD3682 Frequently Asked Questions (FAQs)

  • A 2-layer or 4-layer PCB with a solid ground plane and thermal vias is recommended. The device should be placed near a thermal pad or heat sink to dissipate heat efficiently.
  • The FDD3682 requires a 5V supply voltage and a 1.8V or 3.3V logic supply voltage. Ensure the input voltage is within the recommended range and the device is properly decoupled with capacitors.
  • The FDD3682 can handle a maximum current of 3A per channel. However, the actual current handling capability may vary depending on the application and PCB design.
  • Use overvoltage protection (OVP) and overcurrent protection (OCP) circuits to prevent damage to the device. A fuse or a polyfuse can be used to limit the current in case of a fault.
  • The FDD3682 is rated for operation from -40°C to 125°C. However, the device may not perform optimally at extreme temperatures, and derating may be necessary.

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FDD3682 Overview

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FDD3682 Alternates

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Part Image FDD3682 Rochester Electronics LLC

5.5A, 100V, 0.036ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA, TO-252AA, 3 PIN

Part Image HUF75617D3ST Intersil Corporation

Power Field-Effect Transistor, 16A I(D), 100V, 0.09ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA

Part Image FDD3682 Fairchild Semiconductor Corporation

Power Field-Effect Transistor, 5.5A I(D), 100V, 0.036ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA

Part Image HUF75617D3S_NL Fairchild Semiconductor Corporation

Power Field-Effect Transistor, 16A I(D), 100V, 0.09ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA

Part Image HUF75617D3S Fairchild Semiconductor Corporation

Power Field-Effect Transistor, 16A I(D), 100V, 0.09ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA

For a full list of alternate parts for FDD3682, check out Findchips.com