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FDD3680 - onsemi

Description: Obsolete - PowerTrench MOSFET, N-Channel, 100V, 32A, 36mΩ

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PCB Footprints
FDD3680 - onsemi PCB footprint - Other - Other - DPAK3 (TO−252 3 LD) CASE 369AS
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FDD3680 Details

  • Manufacturer Part Number:

    FDD3680

  • Brand Name:

    onsemi

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Obsolete

  • Part Package Code:

    DPAK-3 / TO-252-3

  • Manufacturer Package Code:

    369AS

  • ECCN Code:

    EAR99

  • Manufacturer:

    onsemi

  • YTEOL:

    0

  • Avalanche Energy Rating (Eas):

    245 mJ

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    100 V

  • Drain Current-Max (ID):

    25 A

  • Drain-source On Resistance-Max:

    0.046 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JEDEC-95 Code:

    TO-252

  • JESD-30 Code:

    R-PSSO-G2

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    2

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    175 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    60 W

  • Pulsed Drain Current-Max (IDM):

    100 A

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    YES

  • Terminal Finish:

    MATTE TIN

  • Terminal Form:

    GULL WING

  • Terminal Position:

    SINGLE

  • Time@Peak Reflow Temperature-Max (s):

    30

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

FDD3680 Frequently Asked Questions (FAQs)

  • A 2-layer or 4-layer PCB with a solid ground plane and thermal vias is recommended. The device should be placed near a thermal pad or heat sink to dissipate heat efficiently.
  • Ensure proper heat sinking, use a thermal interface material, and follow the recommended PCB layout. Also, consider derating the device's power handling at high temperatures.
  • The SOA is typically defined by the device's voltage, current, and power ratings. For the FDD3680, the SOA is typically limited by the maximum junction temperature (Tj) of 150°C, and the maximum power dissipation (Pd) of 2.5W.
  • Use ESD protection devices, such as TVS diodes or ESD arrays, on the input and output pins. Also, follow proper handling and storage procedures to prevent ESD damage.
  • The recommended input capacitance is 10nF to 100nF, and the recommended output capacitance is 10nF to 100nF. However, the optimal capacitance values may vary depending on the specific application and operating frequency.

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FDD3680 Overview

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Image Part Number Model
Part Image FDD3680 Rochester Electronics LLC

25A, 100V, 0.046ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252, DPAK-3

Part Image FDD3680 Fairchild Semiconductor Corporation

Power Field-Effect Transistor, 25A I(D), 100V, 0.046ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252