FDD6N50TM-WS - onsemi
Description: Low Crss (Typ. 9 pF); Low gate charge (Typ. 12.8 nC); Improved dv/dt capability; RDS(on) = 900mΩ (Max.) @ VGS = 10V, ID = 3A; 100% avalanche tested
Description: Low Crss (Typ. 9 pF); Low gate charge (Typ. 12.8 nC); Improved dv/dt capability; RDS(on) = 900mΩ (Max.) @ VGS = 10V, ID = 3A; 100% avalanche tested
