FDD8896 - onsemi
Description: Low gate charge; High power and current handling capability; RDS(ON) = 6.8 mΩ, VGS = 4.5V, ID = 35V; RDS(ON) = 5.7 mΩ, VGS = 10V, ID = 35V; High performance trench technology for extremely low RDS(ON)
Description: Low gate charge; High power and current handling capability; RDS(ON) = 6.8 mΩ, VGS = 4.5V, ID = 35V; RDS(ON) = 5.7 mΩ, VGS = 10V, ID = 35V; High performance trench technology for extremely low RDS(ON)
