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FDD8896 - onsemi

Description: Low gate charge; High power and current handling capability; RDS(ON) = 6.8 mΩ, VGS = 4.5V, ID = 35V; RDS(ON) = 5.7 mΩ, VGS = 10V, ID = 35V; High performance trench technology for extremely low RDS(ON)

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Symbol
FDD8896 - onsemi - PCB symbol
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PCB Footprints
FDD8896 - onsemi PCB footprint - Other - Other - DPAK3 (TO−252 3 LD) CASE 369AS ISSUE O_FFW-2
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3D Models
FDD8896 - onsemi - 3D model - Other - DPAK3 (TO−252 3 LD) CASE 369AS ISSUE O_FFW-2
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FDD8896 Details

  • Manufacturer Part Number:

    FDD8896

  • Brand Name:

    onsemi

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Obsolete

  • Part Package Code:

    DPAK-3 / TO-252-3

  • Package Description:

    DPAK-3

  • Manufacturer Package Code:

    369AS

  • Country Of Origin:

    Mainland China

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    14 Weeks

  • Manufacturer:

    onsemi

  • YTEOL:

    0

  • Avalanche Energy Rating (Eas):

    168 mJ

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    30 V

  • Drain Current-Max (ID):

    17 A

  • Drain-source On Resistance-Max:

    0.068 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JEDEC-95 Code:

    TO-252AA

  • JESD-30 Code:

    R-PSSO-G2

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    2

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    175 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    80 W

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    YES

  • Terminal Finish:

    Matte Tin (Sn) - annealed

  • Terminal Form:

    GULL WING

  • Terminal Position:

    SINGLE

  • Time@Peak Reflow Temperature-Max (s):

    30

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

FDD8896 Frequently Asked Questions (FAQs)

  • A good PCB layout for the FDD8896 involves keeping the high-current paths short and wide, using a solid ground plane, and placing the input capacitors close to the device. Additionally, it's recommended to use a shielded inductor and to keep the switching node (SW) away from sensitive analog circuits.
  • To optimize the FDD8896 for low standby power consumption, ensure that the EN pin is properly biased to turn off the device when not in use. Also, minimize the voltage on the VIN pin and use a low-quiescent-current regulator for the VCC pin. Furthermore, consider using a low-power mode or shutdown mode if available.
  • The FDD8896 has a thermal pad that must be connected to a thermal plane on the PCB to dissipate heat. Ensure good thermal conductivity by using a thermal interface material and a heat sink if necessary. Also, keep the device away from other heat sources and ensure good airflow around the device.
  • To troubleshoot issues with the FDD8896, start by verifying the input voltage and current, and checking for proper pin connections. Use an oscilloscope to check the switching node (SW) and output voltage waveforms. Also, check for thermal issues and ensure that the device is not overheating.
  • The FDD8896 has built-in ESD protection, but it's still important to follow proper ESD handling procedures during manufacturing and assembly. Ensure that the device is handled in an ESD-protected environment, and use ESD-protective packaging and materials.

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FDD8896 Overview

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FDD8896 Alternates

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Image Part Number Model
Part Image FDD6606 Rochester Electronics LLC

75A, 30V, 0.006ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252, DPAK-3
Part Image FDD8896 Fairchild Semiconductor Corporation

Power Field-Effect Transistor, 17A I(D), 30V, 0.068ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA
Part Image FDD6606 Fairchild Semiconductor Corporation

Power Field-Effect Transistor, 75A I(D), 30V, 0.006ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252
Part Image FDD8896_NL Fairchild Semiconductor Corporation

Power Field-Effect Transistor, 17A I(D), 30V, 0.068ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA
Part Image FDD6606_NL Fairchild Semiconductor Corporation

Power Field-Effect Transistor, 75A I(D), 30V, 0.006ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252
For a full list of alternate parts for FDD8896, check out Findchips.com