FDG410NZ - onsemi

Description: Max FDS(on) = 70 m2 at VGs = 4.5 V. lo= 2.2 A GS Max fps(on) = 77 m2 at V Ves=2.5 V. ID = 2.0 A Max FDS(on) = 87 m2 at VGs = 1.8 V. Io = 1.8 A Max FDS(on) = 115 m2 at Vos = 1.5 V. Ip = 1.5 A HBM ESD protection level > 2 kV (Note 3) High performance trench technology for extremely low (DS(on) ■High power and current handling capability Fast switching speed Low gate charge RoHS Compliant