Part Image

FDG410NZ - onsemi

Description: Max FDS(on) = 70 m2 at VGs = 4.5 V. lo= 2.2 A GS Max fps(on) = 77 m2 at V Ves=2.5 V. ID = 2.0 A Max FDS(on) = 87 m2 at VGs = 1.8 V. Io = 1.8 A Max FDS(on) = 115 m2 at Vos = 1.5 V. Ip = 1.5 A HBM ESD protection level > 2 kV (Note 3) High performance trench technology for extremely low (DS(on) ■High power and current handling capability Fast switching speed Low gate charge RoHS Compliant

Download FDG410NZ Model
Schematic
symbols
Schematic symbol is unavailable for download
PCB
footprints
PCB footprint is unavailable for download
3D
models
3D model is unavailable for download
PCB Footprints
FDG410NZ - onsemi PCB footprint - SOT23 (6-Pin) - SOT23 (6-Pin) - FDG
click to zoom
3D Models
FDG410NZ - onsemi  - 3D model - SOT23 (6-Pin) - FDG
click to zoom

FDG410NZ Details

  • Manufacturer Part Number:

    FDG410NZ

  • Brand Name:

    onsemi

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Obsolete

  • Part Package Code:

    SC-88-6 / SC-70-6 / SOT-363-6

  • Package Description:

    ROHS COMPLIANT, SC-70, 6 PIN

  • Manufacturer Package Code:

    419AD

  • ECCN Code:

    EAR99

  • Manufacturer:

    onsemi

  • YTEOL:

    0

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    20 V

  • Drain Current-Max (ID):

    2.2 A

  • Drain-source On Resistance-Max:

    0.07 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • Feedback Cap-Max (Crss):

    70 pF

  • JESD-30 Code:

    R-PDSO-G6

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    6

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    0.42 W

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    YES

  • Terminal Finish:

    Matte Tin (Sn) - annealed

  • Terminal Form:

    GULL WING

  • Terminal Position:

    DUAL

  • Time@Peak Reflow Temperature-Max (s):

    30

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

FDG410NZ Frequently Asked Questions (FAQs)

  • The maximum junction temperature that the FDG410NZ can withstand is 150°C.
  • To ensure proper biasing, connect the gate to a voltage source through a resistor, and the source to ground through another resistor. The recommended biasing voltage is typically around 2-4V.
  • To minimize thermal resistance, use a thermal pad on the PCB, and ensure good thermal conductivity between the device and the heat sink. A copper pour on the PCB can also help to dissipate heat.
  • Yes, the FDG410NZ is suitable for high-frequency switching applications up to 1 MHz. However, ensure that the device is properly biased and the PCB layout is optimized for high-frequency operation.
  • To protect the FDG410NZ from ESD, use an ESD protection device, such as a TVS diode, and follow proper handling and storage procedures to prevent ESD damage.

Trust Checks

This model has been built in collaboration with the manufacturer.
Manufacturer Collaborated
This model has been verified by system checks.
System Verified
This model has been reviewed by community users.
Community Approved
Sponsored

FDG410NZ Overview

Use the download button to access the FDG410NZ schematic symbol, PCB footprint, and 3D model.
To find more CAD model downloads similar to this part, try a partial part number search, like FDG41, or try a keyword search, such as Small Signal Field-Effect Transistors

Parts related to FDG410NZ

Showing 0 results