FDG41 Model Download Search Results

Showing 3 of 3 results

Price & Stock Powered by Findchips

Filter by Manufacturer

Image Part Number D.S Description Package Category Prices / Stock Model Action
Image Part Number D.S Description Package Category Prices / Stock Model Action
Part Image Part Image
FDG410NZ onsemi
1 Max FDS(on) = 70 m2 at VGs = 4.5 V. lo= 2.2 A GSMax fps(on) = 77 m2 at V Ves=2.5 V. ID = 2.0 AMax FDS(on) = 87 m2 at VGs = 1.8 V. Io = 1.8 AMax FDS(on) = 115 m2 at Vos = 1.5 V. Ip = 1.5 AHBM ESD protection level > 2 kV (Note 3)High performance trench technology for extremely low (DS(on)■High power and current handling capabilityFast switching speedLow gate chargeRoHS Compliant SOT23 (6-Pin) FDG410NZ 1 Download Model
Part Image Part Image
FDG410NZ Fairchild Semiconductor Corporation
1 Power Field-Effect Transistor, 2.2A I(D), 20V, 0.07ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET FDG410NZ 0 Build or Request
Part Image Part Image
FDG410NZ-G Fairchild Semiconductor Corporation
1 Power Field-Effect Transistor, 2.2A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET FDG410NZ-G 0 Build or Request
Can't find what you're looking for? Request this part