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FDG410NZ
onsemi
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1 | Max FDS(on) = 70 m2 at VGs = 4.5 V. lo= 2.2 A GSMax fps(on) = 77 m2 at V Ves=2.5 V. ID = 2.0 AMax FDS(on) = 87 m2 at VGs = 1.8 V. Io = 1.8 AMax FDS(on) = 115 m2 at Vos = 1.5 V. Ip = 1.5 AHBM ESD protection level > 2 kV (Note 3)High performance trench technology for extremely low (DS(on)■High power and current handling capabilityFast switching speedLow gate chargeRoHS Compliant | SOT23 (6-Pin) | FDG410NZ |
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FDG410NZ
Fairchild Semiconductor Corporation
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1 | Power Field-Effect Transistor, 2.2A I(D), 20V, 0.07ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | FDG410NZ |
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FDG410NZ-G
Fairchild Semiconductor Corporation
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1 | Power Field-Effect Transistor, 2.2A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET | FDG410NZ-G |
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