FDH50N50-F133 - onsemi
Description: Improved dv/dt capability; 100% avalanche tested; Low gate charge ( Typ. 105nC); RDS(on) = 105mΩ ( Max.)@ VGS = 10V, ID = 24A; Low Crss ( Typ. 50pF)
Description: Improved dv/dt capability; 100% avalanche tested; Low gate charge ( Typ. 105nC); RDS(on) = 105mΩ ( Max.)@ VGS = 10V, ID = 24A; Low Crss ( Typ. 50pF)
