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FDH50N50-F133 - onsemi

Description: Improved dv/dt capability; 100% avalanche tested; Low gate charge ( Typ. 105nC); RDS(on) = 105mΩ ( Max.)@ VGS = 10V, ID = 24A; Low Crss ( Typ. 50pF)

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PCB Footprints
FDH50N50-F133 - onsemi PCB footprint - Transistor Outline, Vertical - Transistor Outline, Vertical - TO−247−3LD HEIGHT 4.82
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3D Models
FDH50N50-F133 - onsemi  - 3D model - Transistor Outline, Vertical - TO−247−3LD HEIGHT 4.82
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FDH50N50-F133 Details

  • Manufacturer Part Number:

    FDH50N50-F133

  • Brand Name:

    onsemi

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Obsolete

  • Part Package Code:

    TO-247 3L

  • Package Description:

    TO-247AB, 3 PIN

  • Manufacturer Package Code:

    340CK

  • Reach Compliance Code:

    Not Compliant

  • Country Of Origin:

    Mainland China

  • ECCN Code:

    EAR99

  • Manufacturer:

    onsemi

  • YTEOL:

    0

  • Avalanche Energy Rating (Eas):

    1868 mJ

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    500 V

  • Drain Current-Max (ID):

    48 A

  • Drain-source On Resistance-Max:

    0.105 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JEDEC-95 Code:

    TO-247AB

  • JESD-30 Code:

    R-PSFM-T3

  • JESD-609 Code:

    e3

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    FLANGE MOUNT

  • Peak Reflow Temperature (Cel):

    NOT SPECIFIED

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    625 W

  • Pulsed Drain Current-Max (IDM):

    192 A

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    NO

  • Terminal Finish:

    Matte Tin (Sn) - annealed

  • Terminal Form:

    THROUGH-HOLE

  • Terminal Position:

    SINGLE

  • Time@Peak Reflow Temperature-Max (s):

    NOT SPECIFIED

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

FDH50N50-F133 Frequently Asked Questions (FAQs)

  • The maximum operating frequency of the FDH50N50-F133 is 100 kHz, but it can be used up to 200 kHz with some derating.
  • Proper cooling can be achieved by using a heat sink with a thermal resistance of 1°C/W or lower, and ensuring good airflow around the device.
  • The recommended gate drive voltage for the FDH50N50-F133 is between 10V and 15V, with a maximum of 20V.
  • Yes, the FDH50N50-F133 can be used in a bridge configuration, but it requires proper synchronization of the gate signals to prevent shoot-through currents.
  • The maximum allowed voltage imbalance between the drain and source terminals is ±10V to prevent damage to the device.

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FDH50N50-F133 Overview

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