FDMB3900AN - onsemi

Description: Max rDS(on) = 23 mΩ at VGS = 10 V, ID = 7.0 A ; High performance trench technology for extremely low rDS(on) ; Max rDS(on) = 33 mΩ at VGS = 4.5 V, ID = 5.5 A ; High power and current handling capability ; Fast switching speed ; RoHS Compliant; Low gate charge