FDMC610P - onsemi

Description: Max rDS(on) = 6.4 mΩ at VGS = -2.5 V, ID = -16 A; Lower output capacitance, gate resistance, and gate charge boost efficiency; RoHS Compliant; Max rDS(on) = 3.9 mΩ at VGS = -4.5 V, ID = -22 A; State-of-the-art switching performance; Shielded gate technology reduces switch node ringing and increases immunity to EMI and cross conduction