FDMS6673BZ - onsemi

Description: Max rDS(on) = 12.5 mΩ at VGS = -4.5 V, ID = -11.2 A ; Advanced Package and Silicon combination for low rDS(on) ; Max rDS(on) = 6.8 mΩ at VGS = -10 V, ID = -15.2 A ; MSL1 robust package design ; RoHS Compliant ; HBM ESD protection level of 8 kV typical (Note 3)