FDMS86105 - onsemi

Description: 100% UIL tested; Advanced package and silicon combination for low rDS(on) and high efficiency; Max rDS(on) = 54 mΩ at VGS = 6 V, ID = 4.5 A; Max rDS(on) = 34 mΩ at VGS = 10 V, ID = 6 A; MSL1 robust package design; RoHS Compliant; Shielded Gate MOSFET Technology