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FDMS86105 - onsemi

Description: 100% UIL tested; Advanced package and silicon combination for low rDS(on) and high efficiency; Max rDS(on) = 54 mΩ at VGS = 6 V, ID = 4.5 A; Max rDS(on) = 34 mΩ at VGS = 10 V, ID = 6 A; MSL1 robust package design; RoHS Compliant; Shielded Gate MOSFET Technology

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PCB Footprints
FDMS86105 - onsemi PCB footprint - Other - Other - PQFN8 5X6, 1.27P CASE 483AE ISSUE A_2019OCT
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3D Models
FDMS86105 - onsemi  - 3D model - Other - PQFN8 5X6, 1.27P CASE 483AE ISSUE A_2019OCT
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FDMS86105 Details

  • Manufacturer Part Number:

    FDMS86105

  • Brand Name:

    onsemi

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Part Package Code:

    PQFN-8

  • Package Description:

    ROHS COMPLIANT, POWER 56, 8 PIN

  • Manufacturer Package Code:

    483AE

  • Country Of Origin:

    Mainland China

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    8 Weeks

  • Manufacturer:

    onsemi

  • YTEOL:

    5.85

  • Avalanche Energy Rating (Eas):

    50 mJ

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    100 V

  • Drain Current-Max (ID):

    6 A

  • Drain-source On Resistance-Max:

    0.034 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JEDEC-95 Code:

    MO-240AA

  • JESD-30 Code:

    R-PDSO-F5

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    5

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    48 W

  • Pulsed Drain Current-Max (IDM):

    30 A

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    YES

  • Terminal Finish:

    Matte Tin (Sn) - annealed

  • Terminal Form:

    FLAT

  • Terminal Position:

    DUAL

  • Time@Peak Reflow Temperature-Max (s):

    30

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

FDMS86105 Frequently Asked Questions (FAQs)

  • A 2-layer or 4-layer PCB with a solid ground plane and thermal vias is recommended. Keep the thermal pad connected to the ground plane to improve heat dissipation.
  • Ensure the input voltage (VIN) is within the recommended range (4.5V to 18V). Use a stable voltage regulator and decoupling capacitors to minimize noise and ripple.
  • The maximum allowed current is 1.5A. Exceeding this limit may cause the device to overheat or fail.
  • Use a voltage supervisor or a voltage monitor IC to detect and respond to overvoltage and undervoltage conditions. Add TVS diodes or zener diodes for overvoltage protection.
  • Use a TVS diode or a transient voltage suppressor (TVS) array to protect the device from electrostatic discharge (ESD) events.

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FDMS86105 Overview

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