FDP083N15A-F102 - onsemi

Description: Low Gate Charge, QG = 64.5nC ( Typ.); High Power and Current Handling Capability; RoHS Compliant; Fast Switching Speed; High Performance Trench Technology for Extremely Low RDS(on); RDS(on) = 6.85mΩ ( Typ.)@ VGS = 10V, ID = 75A

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