FDP20N50 - onsemi
Description: 100% avalanche tested; RDS(on) = 230mΩ ( Typ.)@ VGS = 10V, ID = 10A; Low Crss ( Typ. 27pF); Low gate charge ( Typ. 45.6nC)
Description: 100% avalanche tested; RDS(on) = 230mΩ ( Typ.)@ VGS = 10V, ID = 10A; Low Crss ( Typ. 27pF); Low gate charge ( Typ. 45.6nC)
