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FDP20N50 - onsemi

Description: 100% avalanche tested; RDS(on) = 230mΩ ( Typ.)@ VGS = 10V, ID = 10A; Low Crss ( Typ. 27pF); Low gate charge ( Typ. 45.6nC)

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PCB Footprints
FDP20N50 - onsemi PCB footprint - Transistor Outline, Vertical - Transistor Outline, Vertical - TO−220−3LD_3
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3D Models
FDP20N50 - onsemi  - 3D model - Transistor Outline, Vertical - TO−220−3LD_3
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FDP20N50 Details

  • Manufacturer Part Number:

    FDP20N50

  • Brand Name:

    onsemi

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Obsolete

  • Part Package Code:

    TO-220-3

  • Manufacturer Package Code:

    340AT

  • ECCN Code:

    EAR99

  • Manufacturer:

    onsemi

  • YTEOL:

    0

  • Additional Feature:

    AVALANCHE RATED

  • Avalanche Energy Rating (Eas):

    1110 mJ

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    500 V

  • Drain Current-Max (ID):

    20 A

  • Drain-source On Resistance-Max:

    0.23 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JEDEC-95 Code:

    TO-220AB

  • JESD-30 Code:

    R-PSFM-T3

  • JESD-609 Code:

    e3

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    FLANGE MOUNT

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    250 W

  • Pulsed Drain Current-Max (IDM):

    80 A

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    NO

  • Terminal Finish:

    MATTE TIN

  • Terminal Form:

    THROUGH-HOLE

  • Terminal Position:

    SINGLE

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

FDP20N50 Frequently Asked Questions (FAQs)

  • The maximum SOA for the FDP20N50 is typically defined by the voltage and current ratings. However, it's essential to consult the datasheet and application notes for specific guidance on SOA, as it may vary depending on the application and operating conditions.
  • To minimize switching losses, ensure the gate drive voltage is sufficient (typically 10-15V) and the gate resistance is low (typically <10 ohms). Also, consider using a gate driver IC or a dedicated gate drive circuit to optimize the switching performance.
  • For optimal thermal performance, ensure the PCB layout provides a low thermal resistance path from the device to a heat sink or thermal pad. Use a thermal interface material (TIM) and follow the recommended land pattern and thermal design guidelines from onsemi.
  • Yes, the FDP20N50 is suitable for high-frequency switching applications. However, consider the device's switching characteristics, such as the rise and fall times, and ensure the gate drive and PCB layout are optimized for high-frequency operation.
  • Implement overvoltage protection (OVP) and overcurrent protection (OCP) circuits to prevent damage from voltage and current surges. Consider using a voltage supervisor or a dedicated OVP/OCP IC to monitor and respond to fault conditions.

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FDP20N50 Overview

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