FDP20N50F - onsemi
Description: Low gate charge ( Typ. 50nC); Improved dv/dt capability; RoHS compliant; Low Crss ( Typ. 27pF); RDS(on) = 210mΩ ( Typ.)@ VGS = 10V, ID = 10A; 100% avalanche tested
Description: Low gate charge ( Typ. 50nC); Improved dv/dt capability; RoHS compliant; Low Crss ( Typ. 27pF); RDS(on) = 210mΩ ( Typ.)@ VGS = 10V, ID = 10A; 100% avalanche tested
